2026/27 · 官方课程目录版本
该 PDF 文件注明的生效学期为 Semester A 2026/27。
这版课程介绍仍在逐项核对。选课前,请对照下方校方原文件确认修读条件和考核要求。
2026/27 开课安排尚未核对。选课前请在 AIMS 确认可选课节。
The PDF Effective Term is separate from the 2026/27 catalogue year and current offering observation.
这门课学什么
港真课程概览
介绍半导体材料类型、生长与薄膜制备和掺杂,再延伸至结结构、光电与电子器件的工作机制及相关制程。
- 课程简介
- The course aims to give students a deeper understanding of the physical characteristics, structures, and fabrication process of electronic and optoelectronic semiconductor devices involving different semiconductor materials.
校方 PDF 第 2 页 · Abstract
- 课程内容
- Overview of Semiconductor Materials: Brief introduction of semiconductor materials in modern society, Group IV, group III-Vand group II-VI semiconductors. Alloyed semiconductor materials. Wide bandgap semiconductors. Newly emerging 2D semiconductors. The introduction of various kinds of growth methods for semiconductor bulk crystals and thin films. Physical Properties and Doping Technologies of Semiconductor Materials: Introduction of doping effect and various kinds of doping technologies for semiconductors. Optical and thermal properties of semiconductor materials. Junctions and Semiconductor Optoelectronic Devices: Brief introduction of physical model and current-voltage curve of p‒n junctions and introduction of junction field-effect transistors (JFETs). Introduction and working principles of typical optoelectronic devices including photodetectors, light-emitting diodes/laser diodes. Semiconductor Electronic Devices: Working mechanism of metal oxide semiconductor field-effect transistors (MOSFETs). Introduction of thin film transistors (TFTs). Introduction of emerging two-dimensional semiconductor transistors. Working principle and fabrication of complementary metal-oxide-semiconductor (CMOS) structure. Introduction of integrated circuits (ICs). Laboratory Experiment: Unit 1 Characterization of MOSFET Unit 2 Fabrication and Characterization of 2D Material Transistors
校方 PDF 第 4 页 · Keyword Syllabus
- 预期学习成果
查看校方学习成果与对应条件
CILOs Weighting (if DEC-A1 DEC-A2 DEC-A3 app.) 1 To describe the different types of semiconductor x x materials and their typical growth methods. 2 To describe physical properties and doping x x technologies of semiconductor materials 3 To describe the structures and working x x mechanism of various junctions and semiconductor optoelectronic devices 4 To describe the structures and working x x mechanism of various semiconductor electronic devices.校方 PDF 第 2 页 · Course Intended Learning Outcomes (CILOs)
我能不能修这门课
先修、建议先备和并修要求分别查看;等同及互斥条件也会影响选课。and 表示同时满足,or 表示备选;组合条件按下方原文分组阅读。
- 先修条件
校方 PDF 第 1 页 · Prerequisites
- 建议先备知识
- 无(校方注明 Nil)
校方 PDF 第 1 页 · Precursors
- 并修要求
- 该版官方课纲未列明该项。
- 其他修读要求
- 该版官方课纲未列明该项。
- 等同课程及条件
- 无(校方注明 Nil)
校方 PDF 第 1 页 · Equivalent Courses
- 互斥课程及条件
- 无(校方注明 Nil)
校方 PDF 第 1 页 · Exclusive Courses
怎么考,怎样才算通过
- 考核方式
- Continuous Assessment (%): 40; Examination (%): 60; Examination Duration (Hours): 2
查看校方原始考核表与使用要求
ATs CILO No. Weighting (%) Remarks Allow Use of GenAI? 1 Tests (min.: 1) 1, 2, 3, 4 20 - No 2 #Assignments 1, 2, 3, 4 5 - Yes (min.: 2) 3 Lab Exercises/ 1, 2, 4 15 - Yes Reports (min.: 2)校方 PDF 第 3 页 · Continuous Assessment (%),Examination (%),Examination Duration (Hours)
- 通过条件
- Minimum Examination Passing Requirement (%): 30 Additional Information for ATs: Remark: To pass the course, students are required to achieve at least 30% in course work and 30% in the examination. Also, 75% laboratory attendance rate must be obtained. # may include homework, tutorial exercise, project/mini-project, presentation
校方 PDF 第 3 页 · Minimum Examination Passing Requirement (%),Additional Information for ATs
学分、时长与版本信息
- 本版本课程名称
- Semiconductor Materials and Devices
校方 PDF 第 1 页 · Course Title
- 本版本学分
- 3
校方 PDF 第 1 页 · Credit Units
- 修读时长
- One Semester
校方 PDF 第 1 页 · Course Duration
- 课纲生效学期
- Semester A 2026/27
- 课纲列明的级别
- B1, B2, B3, B4 - Bachelor's Degree
校方 PDF 第 1 页 · Level
核对官方原文件
可通过下方校方链接阅读或下载该版原始 PDF。 EE3800 · 打开校方原始 PDF ↗
来源 · 校方课程介绍 ↗ · 查阅 2026-10-20T13:37:43.333Z